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A new silicon MBE with the capacity to process up to 8-inch wafers in batches of multiple wafers.

Advanced Visible and Ultraviolet Detectors and Imaging Systems

Advances generated at MDL will extend our vision to unprecedented sensitivity of low light levels that will enable unimagined future discoveries and capability.

Researchers at MDL develop high-performance detectors using nanoscale bandstructure engineering, employing epitaxial techniques, including molecular-beam epitaxy (MBE) and atomic layer deposition (ALD). For example, applying these processes to fully fabricated silicon imaging detectors such as charge-coupled device (CCD) and complementary metal-oxide semiconductor (CMOS) arrays, MDL has achieved 100% internal quantum efficiency (QE) with JPL-invented delta-doping and new superlattice doping techniques. Combining MBE processes with novel antireflection coatings using ALD, we have demonstrated reliable performance in QE in the UV. MDL is applying surface and interface engineering using epitaxial techniques to other materials and detector systems such as gallium nitride and its alloys for detector and photocathode configurations. In addition to enabling future astrophysics, planetary, and heliophysics missions, MDL also partners to extend the application of our detectors to other fields such as medical diagnostics and industrial process inspections.

 

Current Projects